• DocumentCode
    2978121
  • Title

    Low Residual Stress and High Repeatability of SiNX Thin Films for InP-based Optoelectronic Device Fabrication by Dual Radio Frequency Plasma Enhanced Chemical Vapor Deposition

  • Author

    Song, Yu ; Xiong, Bing ; Sun, Changzheng ; Luo, Yi

  • Author_Institution
    Tsinghua Univ., Beijing
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating influence of dielectric films formerly deposited on chamber wall.
  • Keywords
    III-V semiconductors; dielectric thin films; indium compounds; internal stresses; optoelectronic devices; plasma CVD coatings; semiconductor thin films; silicon compounds; wide band gap semiconductors; PECVD; chamber wall; dielectric films; dual radio frequency plasma enhanced chemical vapor deposition; high-repeatability thin films; optoelectronic device fabrication; plasma enhanced chemical vapor deposition; residual stress; Chemical vapor deposition; Dielectric thin films; Optical device fabrication; Optoelectronic devices; Plasma chemistry; Plasma devices; Radio frequency; Residual stresses; Sputtering; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381166
  • Filename
    4265923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2978121