Title :
GaInP/GaInAs/Ge triple junction solar cells for ultra high concentration
Author :
Barrigon, E. ; Rey-Stolle, I. ; Galiana, B. ; Garcia, I. ; Algora, C.
Author_Institution :
Solar Energy Inst., Tech. Univ. of Madrid, Madrid
Abstract :
In this paper we characterize the first functional, lattice matched, GaInP/GaInAs/Ge triple junction solar cells grown and manufactured in our lab with an efficiency conversion of 31.5% at a concentration level of 1000 suns. This is our first approach for transferring the world record double junction solar cell, also developed in our group, into a Ge substrate. First experimental results are presented and the strategy to improve its efficiency is outlined.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; germanium; indium compounds; solar cells; GaInP-GaInAs-Ge; concentration level; conversion efficiency; external quantum efficiency; triple junction solar cells; ultra high concentration; Epitaxial growth; Gallium arsenide; Germanium; Lattices; Photoconductivity; Photonic band gap; Photovoltaic cells; Solar power generation; Substrates; Sun;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800513
