DocumentCode :
2978155
Title :
Tunable Near Infra Red InP / InGaAs QWs Based Photodetector Integrated in a MOEMS Structure for the Realisation of a Micro-Spectrometer
Author :
Parillaud, O. ; Garrigues, M. ; Leclercq, J.-L. ; Gil-Sobraques, R. ; Crochon, M. ; Roger, J.-M. ; Amore, O. ; Vilotich, B.
Author_Institution :
Alcatel Thales III-V lab, Palaiseau
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
237
Lastpage :
240
Abstract :
This paper deals with the design and realisation of a Near Infra-Red (NIR) micro-spectrometer (1.5 to 2 mum) for non invasive detection. The device is based on an InGaAs strained QWs photodiode integrated in a MOEMS structure for wavelength tunability. We address two main challenges which are the realisation of a long wavelength photodetector combined with the fabrication of a micro-machined tunable air-gap cavity resonator. We present first the design and process critical issues related to the residual strain management in the structure. The InGaAs QW growth aspects are presented. We also describe an example of a system for the monitoring of the sugar concentration in water which has been chosen to validate the concept.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectrometers; micro-optomechanical devices; photodetectors; photodiodes; InP-InGaAs; MOEMS; microspectrometer; photodetector; photodiode; strain management; sugar concentration monitoring; tunable near infrared QW; wavelength 1.5 mum to 2 mum; wavelength tunability; Air gaps; Capacitive sensors; Cavity resonators; Fabrication; Indium gallium arsenide; Indium phosphide; Infrared detectors; Photodetectors; Photodiodes; Process design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381167
Filename :
4265924
Link To Document :
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