DocumentCode :
2978222
Title :
Fabrication of very large 2,6m x 2,2m amorphous silicon solar modules on glass
Author :
Vetter, M. ; Borrajo, J.P. ; Andreu, J.
Author_Institution :
Dept. Technol., Dev.&Innovation, Parq. Tecnol. de Galicia, San Cibrao das Vinas
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
406
Lastpage :
409
Abstract :
The fabrication of very large photovoltaic thin film modules based on hydrogenated amorphous silicon (a-Si: H) technology on float glass is presented. The different production steps are explained. These are plasma enhanced chemical vapor deposition of a-Si: H films in a 2.6 m x 2.2 m capacitive plasma reactor, transparent conductive oxide (TCO) and metal deposition in an 2.6 m wide in-line sputter tool and high power laser scribing to structure all the thin films. Electrical peak efficiency of 7,5% for a 5,72 m2 module and 7,7% for a 1,43 m2 module has been achieved. Light induced degradation of these 1st generation modules is found to be approx. 20% after long time illumination. A new deposition process was developed for the intrinsic a-Si: H film resulting in a reduction of the silane consumption to 25% reducing considerably production cost of 2nd generation modules.
Keywords :
elemental semiconductors; plasma CVD; semiconductor thin films; silicon; solar cells; Si; amorphous silicon solar modules; capacitive plasma reactor; electrical peak efficiency; glass; hydrogenated amorphous silicon; in-line sputter tool; metal deposition; photovoltaic thin film modules; plasma enhanced chemical vapor deposition; silane consumption; size 2.2 m to 2.6 m; transparent conductive oxide; Amorphous silicon; Chemical technology; Conductive films; Fabrication; Glass; Photovoltaic systems; Plasma chemistry; Production; Semiconductor thin films; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800519
Filename :
4800519
Link To Document :
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