Title :
An Optoelectronic Switch with Multiple Operation States
Author :
Guo, Der-Feng ; Tsai, Jung-Hui ; Weng, Tzu-Yen
Author_Institution :
Air Force Acad., Kaohsiung
Abstract :
A Schottky-contact triangular-barrier optoelectronic switch (STOS), grown by molecular beam epitaxy (MBE), has been fabricated. The triangular barrier, formed by inserting an InGaAs delta-doped (delta-doped) quantum well into an n--GaAs layer, provides a potential well for hole accumulation. Due to the hole accumulation in the delta-doped well and the sequential avalanche multiplications in the reverse-biased pn and metal-semiconductor (M-S) junctions, a double S-shaped negative-differential-resistance (NDR) phenomenon is observed in the current-voltage (I-V) characteristics. The STOS shows a flexible optical function related to the triangular barrier height controllable by incident light. The multistate is switchable by both optical and electrical inputs.
Keywords :
Schottky barriers; avalanche breakdown; electro-optical switches; molecular beam epitaxial growth; optoelectronic devices; p-n junctions; quantum wells; semiconductor-metal boundaries; InGaAs delta-doped quantum well; MBE growth; STOS; Schottky-contact triangular-barrier optoelectronic switch; current-voltage characteristics; double S-shaped negative-differential-resistance phenomenon; hole accumulation; metal-semiconductor junction; molecular beam epitaxy; multiple operation states; n--GaAs layer; reverse-biased pn junction; sequential avalanche multiplication; Communication switching; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical bistability; Optical switches; Potential well; Stimulated emission; Substrates; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381171
