Title :
InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well and Its Application to Compact and Low-Voltage Optical Switch
Author :
Arakawa, T. ; Toya, T. ; Yamaguchi, K. ; Uchimura, T. ; Noh, J.-H. ; Tada, K.
Author_Institution :
Yokohama Nat. Univ., Yokohama
Abstract :
An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) for giant electrorefractive (ER) sensitivity was proposed and studied theoretically and experimentally. Giant ER sensitivity dn/dF (4.4 times 10-4 cm/kV) over 100 nm wavelength range can be expected at around electric field F =-30 ~-60 kV/cm. In addition, a compact and low-voltage FACQW modulator and a 2 times 2 switch with multi-mode interferer (MMI) couplers were also proposed and static operation characteristics were analyzed using BPM. The switching voltage can be reduced to 0.1~0.2 V.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; electro-optical modulation; gallium arsenide; indium compounds; optical switches; quantum well devices; semiconductor quantum wells; InGaAs-InAlAs; electric field; electrorefractive sensitivity; five-layer asymmetric coupled quantum well modulator; low-voltage optical switch; multimode interferer couplers; static operation characteristics; switching voltage; Absorption; Erbium; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical coupling; Optical switches; Optical waveguides; Phase modulation; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381172
