Title :
Electric power in ballistic devices: A reformulation with full Coulomb interaction
Author :
Albareda, G. ; Alarcón, A. ; Oriols, X.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona
Abstract :
An accurate formulation of the electric power in ballistic (classical or quantum) nanoscale devices is presented. The redefinition of the electric power is computed within a many-electron framework (where the dynamic of each electron is determined by its own electric field). The traditional definition of the electric power is compared with the new reformulation presented here for classical double-gate MOSFETs. The accurate results with the many-electron approach show not-negligible discrepancies when compared with the standard definition. Such discrepancies become very important when the single-transistor power is extrapolated to the number of transistors in CPUs.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; nanoelectronics; quantum wires; Coulomb interaction; Monte Carlo simulation; ballistic nanoscale devices; double-gate MOSFETs; double-gate bulk FET; double-gate quantum-wire FET; electric power; many-electron framework; CMOS logic circuits; Double-gate FETs; Electron devices; Energy consumption; Logic devices; MOSFETs; Mutual coupling; Nanoscale devices; Particle scattering; Poisson equations;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800523
