Title :
Optimization of Tunneling-Injection InAs/InP (100) Quantum Dashes Lasers for High-Speed Optoelectronic Devices
Author :
Lelarge, F. ; Rousseau, B. ; Martin, F. ; Poingt, F. ; Le Gouezigou, L. ; Le Gouezigou, O. ; Pommereau, F. ; Accard, A. ; van-Dijk, F.
Author_Institution :
Alcatel Thales III-V Lab., Marcoussis
Abstract :
We investigate in detail the influence of the tunneling-injection design on the device performances of InAs/InP QDashes-based broad-area lasers. Using optimum design, high-performances single mode buried ridge stripe Fabry-Perrot lasers are reported (external efficiency of ~0.17 W/A per facet and threshold current of ~16 mA for as-cleaved 600 mum-long cavity). A relaxation frequency of 8.5 GHz is reported, indicating the good potential of such design for 10 Gb/s direct modulation, and the actual limitations of small-signal modulation bandwidth are discussed.
Keywords :
modulation; optoelectronic devices; quantum dot lasers; tunnelling; InAs-InP; InAs-InP quantum dashes-based broad-area laser; bit rate 10 Gbit/s; frequency 8.5 GHz; high-speed optoelectronic device; single mode buried ridge stripe Fabry-Perrot laser; size 600 mum; small-signal modulation bandwidth; tunneling-injection design; Contacts; Distributed feedback devices; Epitaxial growth; Indium phosphide; Laser modes; Optical design; Optoelectronic devices; Quantum dot lasers; Quantum dots; Threshold current;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381177
