Low Threshold High Efficiency InAs/InGaAlAs/InP ˜1.55 μm Quantum Dash-in-a-Well Lasers

Author

Hein, S. ; Somers, A. ; Höfling, S. ; Forchel, A.

Author_Institution

Univ. of Wurzburg, Wurzburg

fYear

2007

fDate

14-18 May 2007

Firstpage

281

Lastpage

284

Abstract

A dash-in-a-well design was employed to realise low threshold high efficiency lasers in the InAs/InGaAlAs/InP material system emitting near 1.55 μm. A processed 1.0 mm long and 5 μm wide as-cleaved and un-mounted Fabry Perot device reveals a threshold current as low as 47 mA, a total external efficiency of 0.36 W/A and a maximum total output power of 58 mW in cw operation at room temperature. The maximum cw operating temperature is 85°C with a T₀ of 61 K in the range from 15°C to 75°C.

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; InAs-InGaAlAs-InP; as-cleaved device; low-threshold high-efficiency lasers; power 58 mW; quantum dash-in-a-well laser design; temperature 15°C to 75°C; temperature 85°C; unmounted Fabry Perot device; wavelength 1.55 μm; Design optimization; Indium phosphide; Laser noise; Optical design; Optical materials; Power lasers; Quantum dots; Substrates; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0874-1

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381178

Filename

4265935