Title :
Quantum Dot Superluminescent Diodes - Bandwidth Engineering and Epitaxy for High Powers
Author :
Choi, T.L. ; Ray, S.K. ; Zhang, Z. ; Childs, D. ; Groom, K.M. ; Stevens, B.J. ; Liu, H. ; Hopkinson, M. ; Hogg, R.A.
Author_Institution :
Univ. of Sheffield, Sheffield
Abstract :
We present experimental and theoretical work describing the engineering of broadband quantum dot superluminescent diodes for a wide range of applications. The key differences, advantages, and challenges of using quantum dots are discussed.
Keywords :
semiconductor epitaxial layers; semiconductor quantum dots; spectral line breadth; superluminescent diodes; broadband quantum dot superluminescent diodes; semiconductor lasers; superluminescent light emitting diodes; Bandwidth; Chirp; Current density; Epitaxial growth; Power engineering and energy; Power generation; Quantum dot lasers; Quantum dots; Stationary state; Superluminescent diodes; Superluminescent diodes; quantum dots; semiconductor lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381180
