Title :
Emitter Geometry effects in 200 GHz SiGe Heterojunction Bipolar Transistor
Author :
López-Gonzalez, Juan M.
Author_Institution :
Grupo de Micro y Nanotecnologias, Univ. Politec. de Catalunya, Barcelona
Abstract :
This paper studies the effect of emitter scaling in DC gain current and cutoff frequency of 200 GHz SiGe heterojunction bipolar transistor, HBT, using TCAD modeling.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave transistors; semiconductor device models; technology CAD (electronics); DC gain current; SiGe; TCAD modeling; emitter geometry effects; frequency 200 GHz; heterojunction bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; Cutoff frequency; Doping profiles; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor materials; Silicon germanium; Solid modeling;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800528
