DocumentCode
2978376
Title
Emitter Geometry effects in 200 GHz SiGe Heterojunction Bipolar Transistor
Author
López-Gonzalez, Juan M.
Author_Institution
Grupo de Micro y Nanotecnologias, Univ. Politec. de Catalunya, Barcelona
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
440
Lastpage
442
Abstract
This paper studies the effect of emitter scaling in DC gain current and cutoff frequency of 200 GHz SiGe heterojunction bipolar transistor, HBT, using TCAD modeling.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave transistors; semiconductor device models; technology CAD (electronics); DC gain current; SiGe; TCAD modeling; emitter geometry effects; frequency 200 GHz; heterojunction bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; Cutoff frequency; Doping profiles; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor materials; Silicon germanium; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800528
Filename
4800528
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