Title :
High Temperature SiC Blocking Diodes for Solar Array
Author :
Maset, E. ; Sanchis-Kilders, E. ; Jordan, J. ; Ejea, J. Bta ; Ferreres, A. ; Esteve, V. ; Millan, J. ; Godginon, P. ; Jordá, X.
Author_Institution :
Electron. Eng. Dept., Univ. of Valencia, Burjassot
Abstract :
This paper presents the results of an experimental investigation of the performance of 300 V-5A silicon carbide Ni and W Schottky diode operating in the range between -170degC to 270degC. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account the harsh condition of the mission (high temperature range and electrical stress). The destructive and non-destructive tests have assured that the designed SiC diodes are able to support the electro-thermal limits. A reliability test has also been performed to investigate the stability of forward and reverse performances.
Keywords :
Schottky diodes; high-temperature electronics; semiconductor device reliability; silicon compounds; solar cell arrays; thermal analysis; wide band gap semiconductors; BepiColombo mission specification; Schottky diode; SiC; current 5 A; destructive test; electro-thermal characterization; high temperature silicon carbide blocking diode; nondestructive test; reliability test; solar cell array protection; temperature -170 C to 270 C; voltage 300 V; Performance evaluation; Photovoltaic cells; Protection; Schottky diodes; Semiconductor diodes; Silicon carbide; Stability; Sun; Temperature distribution; Voltage;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800529
