Title :
InP-Based Avalanche Photodiodes with ≫ 2.1μm Detection Capability
Author :
Goh, Y.L. ; Ng, J.S. ; Tan, C.H. ; David, J.P.R. ; Sidhu, R. ; Holmes, A.L., Jr. ; Campbell, J.C.
Author_Institution :
Sheffield Univ., Sheffield
Abstract :
Type-II superlattice formed by In0.53Ga0.47As/GaAs0.51Sb0.49 wafers have been grown on InP substrates. The superlattice is studied in several aspects to explore its potential in achieving ≫2.1μm detection InP-based avalanche photodiodes. The ionisation coefficients of the superlattice In0.53 Ga0.47As(5nm) /GaAs0.47Sb0.49 (5nm) are found to be similar to those of In0.53 Ga0.47 As. Hence the more compatible avalanche material is InAlAs for low excess noise performance. In addition photoluminescence data indicated that the detection wavelength of these superlattice can be longer by modifying the superlattice combination, while maintaining lattice-matched to InP.
Keywords :
avalanche photodiodes; gallium arsenide; indium compounds; photoluminescence; InP-In0.53Ga0.47As-GaAs0.51Sb0.49; avalanche photodiodes; detection wavelength; ionisation coefficients; noise performance; photoluminescence data; Avalanche photodiodes; Cooling; Dark current; Diodes; Indium compounds; Indium phosphide; Ionization; Remote monitoring; Superlattices; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0874-1
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381181
