Capacitive and Resistive RF-MEMS switches 2.5D & 3D Electromagnetic and Circuit Modelling

Author

Llamas, M.A. ; Girbau, D. ; Pausas, E. ; Pradell, L. ; Aouba, S. ; Villeneuve, C. ; Puyal, V. ; Pons, P. ; Plana, R. ; Colpo, S. ; Giacomozzi, F.

Author_Institution

Signal Theor. & Commun. Dept., Univ. Politec. de Catalunya, Barcelona

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

451

Lastpage

454

Abstract

In this paper proposes different strategies for the electrical modelling of capacitive and resistive RF-MEMS switches which take into account the dependence of the electrical performance on the mechanical properties and technological processes. The EM modelling of MEMS switches is addressed with 2.5D and 3D full wave EM softwares. More specifically, ADS-Momentumtrade (2.5D) and EMDStrade (3D) from Agilent Technologies are used. Capacitive RF-MEMS switches were fabricated with the LAAS-CNRS 6-mask RF-MEMS process in Toulouse, France, and resistive RF-MEMS switches were fabricated with the FBK-irst 8-mask RF-MEMS process in Trento, Italy. It is shown that, by applying the proposed strategies, 2.5D and 3D simulations are in good agreement with characterization results.

Keywords

capacitor switching; computational electromagnetics; masks; microswitches; microwave switches; 3D full wave EM software; Agilent Technologies; FBK-irst 8-mask RF-MEMS process; LAAS-CNRS 6-mask RF-MEMS process; RF-MEMS fabrication; capacitive RF-MEMS switches; electromagnetic modelling; resistive RF-MEMS; Biomembranes; Circuit topology; Contacts; Electromagnetic modeling; Equivalent circuits; Mechanical factors; Microswitches; Radiofrequency microelectromechanical systems; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Type

conf

DOI

10.1109/SCED.2009.4800531

Filename

4800531