DocumentCode :
2978431
Title :
Capacitive and Resistive RF-MEMS switches 2.5D & 3D Electromagnetic and Circuit Modelling
Author :
Llamas, M.A. ; Girbau, D. ; Pausas, E. ; Pradell, L. ; Aouba, S. ; Villeneuve, C. ; Puyal, V. ; Pons, P. ; Plana, R. ; Colpo, S. ; Giacomozzi, F.
Author_Institution :
Signal Theor. & Commun. Dept., Univ. Politec. de Catalunya, Barcelona
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
451
Lastpage :
454
Abstract :
In this paper proposes different strategies for the electrical modelling of capacitive and resistive RF-MEMS switches which take into account the dependence of the electrical performance on the mechanical properties and technological processes. The EM modelling of MEMS switches is addressed with 2.5D and 3D full wave EM softwares. More specifically, ADS-Momentumtrade (2.5D) and EMDStrade (3D) from Agilent Technologies are used. Capacitive RF-MEMS switches were fabricated with the LAAS-CNRS 6-mask RF-MEMS process in Toulouse, France, and resistive RF-MEMS switches were fabricated with the FBK-irst 8-mask RF-MEMS process in Trento, Italy. It is shown that, by applying the proposed strategies, 2.5D and 3D simulations are in good agreement with characterization results.
Keywords :
capacitor switching; computational electromagnetics; masks; microswitches; microwave switches; 3D full wave EM software; Agilent Technologies; FBK-irst 8-mask RF-MEMS process; LAAS-CNRS 6-mask RF-MEMS process; RF-MEMS fabrication; capacitive RF-MEMS switches; electromagnetic modelling; resistive RF-MEMS; Biomembranes; Circuit topology; Contacts; Electromagnetic modeling; Equivalent circuits; Mechanical factors; Microswitches; Radiofrequency microelectromechanical systems; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Type :
conf
DOI :
10.1109/SCED.2009.4800531
Filename :
4800531
Link To Document :
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