Title :
Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer
Author :
Suzuki, R. ; Miyamoto, T. ; Koyama, F.
Author_Institution :
Tokyo Inst. of Technol., Yokohama
Abstract :
Thermal annealing effects on PL characteristics of MOCVD grown InAs QD on GaNAs buffer layers were investigated. By using GaNAs buffer, the suppression of PL intensity degradation due to the crystalline improvement of GaNAs was observed.
Keywords :
III-V semiconductors; MOCVD; annealing; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; GaNAs; InAs; MOCVD growth; thermal annealing effects; Buffer layers; Crystallization; Degradation; Gallium arsenide; Light sources; MOCVD; Quantum dots; Rapid thermal annealing; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381185
