Title :
Monte Carlo analysis of thermal effects in GaN HEMTs
Author :
Mateos, J. ; Pérez, S. ; Pardo, D. ; González, T.
Author_Institution :
Appl. Phys. Dept., Univ. de Salamanca, Salamanca
Abstract :
By means of a semi-classical Monte Carlo simulator with a consistent self-heating model we have analyzed how the static DC characteristics of GaN HEMTs are modified with respect to the constant room temperature model. The main consequence of the heating of the devices is a decrease of the drain conductance, mainly when the dissipated power is high (high VDS and VGS). Regarding the dynamic SSEC parameters, both Cgs and gm decrease when increasing T, thus reducing the intrinsic cutoff frequency of the transistors.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium compounds; high electron mobility transistors; semiconductor device reliability; thermal analysis; GaN; HEMT static DC characteristics; constant room temperature model; drain conductance; dynamic SSEC parameters; high electron mobility transistor; semiclassical Monte Carlo simulator; semiconductor device heating; temperature 293 K to 298 K; thermal effects; transistor intrinsic cutoff frequency; Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Optical scattering; Photonic band gap; Temperature; Thermal resistance;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800533
