Tunab e Tera ertz Resonance in Planar Asymmetric Nanodiodes

Author

Inguez-de-la-Torre, I. ; Mateos, J. ; Pardo, D. ; Gonzalez, Temoatzin ; Song, A.M.

Author_Institution

Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

463

Lastpage

466

Abstract

In this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the high-frequency response of an asymmetric nonlinear nanodiode. This device exhibits a tunable-by-geometry resonant DC current response to AC voltage excitations in the THz range. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel of the device, which are visible both in noise and rectification. This effect, present at room temperature, could be useful for selective THz detection.

Keywords

Monte Carlo methods; UHF diodes; nanoelectronics; rectification; space charge; terahertz wave devices; AC voltage excitations; Monte Carlo simulations; asymmetric nonlinear nanodiode; collective charge fluctuations; high-frequency response; noise; planar asymmetric nanodiodes; rectification; space charge; tunable terahertz resonance; tunable-by-geometry resonant DC current; Active noise reduction; Doping; Frequency; Indium gallium arsenide; Monte Carlo methods; Nanoscale devices; Resonance; Semiconductor device noise; Semiconductor diodes; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800534

Filename

4800534