DocumentCode :
2978478
Title :
Desorption Time of As Adsorbed on GaInAs Surface Analyzed by X-ray CTR Scattering
Author :
Mori, A. ; Ohtake, Y. ; Ujihara, T. ; Tabuchi, M. ; Takeda, Y.
Author_Institution :
Nagoya Univ., Nagoya
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
315
Lastpage :
318
Abstract :
Compositional grading at hetero-interfaces in InP/Ga0.47In0.53As/InP structures was investigated utilizing X-ray CTR (crystal truncation rod) scattering method. InP/ Ga0.47In0.53As/InP structures were grown on InP(001) substrate by OMVPE (organometallic vapor phase epitaxy). TBAs-, H2-, and TBP-flushing were carried out with various flushing times after the growth of the GaInAs layers. The CTR analysis showed the desorption lifetimes of As in TBAs, H2, and TBP atmosphere are about 23, 22, and 6 s, respectively.
Keywords :
III-V semiconductors; adsorption; desorption; gallium arsenide; indium compounds; vapour phase epitaxial growth; InP-Ga0.47In0.53As; X-ray CTR Scattering; adsorption; compositional grading; desorption lifetimes; desorption time; organometallic vapor phase epitaxy; Atmosphere; Atomic layer deposition; Atomic measurements; Epitaxial growth; HEMTs; Hydrogen; Indium phosphide; MODFETs; Substrates; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381187
Filename :
4265944
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2978478
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