DocumentCode :
2978591
Title :
Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes
Author :
Kinoshita, K. ; Ueda, T. ; Adachi, S. ; Masaki, T. ; Yoda, S. ; Arai, M. ; Watanabe, T. ; Yuda, M. ; Kondo, Y.
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
339
Lastpage :
342
Abstract :
High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.
Keywords :
III-V semiconductors; crystal growth; crystal growth from solution; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; semiconductor lasers; thermal stability; InGaAs -Surface; InGaAs single crystals growth; laser diodes fabrication; temperature stability; traveling liquidus-zone method; wavelength 1.3 μm; Crystals; Diode lasers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser stability; Optical device fabrication; Power generation; Solids; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0874-1
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381192
Filename :
4265949
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2978591
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