Title :
An embedded 1.2 V-read flash memory module in a 0.18 /spl mu/m logic process
Author :
Ditewig, T. ; Cuppens, R. ; Kuo-Lung Chen ; Frowijn, V. ; Jetten, F. ; Kalkman, W. ; Malabry, M. ; Slenter, A. ; Storms, M. ; Tandan, N. ; Teuben, S. ; Gracio, J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
An embedded flash memory module has 1.2 V read capability and a 1.5 V program/erase capability. The flash cell is 2-transistor FN-NOR in a 0.181 /spl mu/m logic process. Design techniques improve observability and reduce test time.
Keywords :
MOS memory circuits; NOR circuits; flash memories; integrated circuit design; 0.18 micron; 1.2 V; 1.5 V; FN-NOR; MOS memories; design techniques; flash memory module; logic process; observability; program/erase capability; read capability; test time; Error correction; Error correction codes; Flash memory; Logic; Multiplexing; Nonvolatile memory; Parallel programming; Read only memory; Testing; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912421
