Title :
A highly reliable 1T1C 1 Mb FRAM with novel ferro-programmable redundancy scheme
Author :
Ohno, C. ; Yamazaki, Hiroshi ; Suzuki, Hajime ; Nagai, E. ; Miyazawa, H. ; Saigoh, K. ; Yamazaki, Tsutomu ; Chung, Yueh-Ting ; Kraus, Werner ; Varhaeghe, D. ; Argos, G. ; Walbert, J. ; Mitra, Subhasish
Author_Institution :
Fujitsu Labs. Ltd., Tokyo, Japan
Abstract :
Two key design techniques improve margins of the 1T1C, 1 Mb FeRAM. One is a redundancy scheme utilizing the same ferroelectric capacitor as used in the memory cell, which can be implemented without additional process steps. The other is an externally controllable dummy cell reference that mimics memory cell properties and also finds weak cells prior to repair.
Keywords :
cellular arrays; ferroelectric capacitors; ferroelectric storage; integrated circuit design; random-access storage; redundancy; 1 Mbit; FRAM; design techniques; externally controllable dummy cell reference; ferro-programmable redundancy scheme; ferroelectric capacitor; memory cell properties; weak cells; Capacitors; Circuits; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Redundancy; Springs; Testing; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912422
