Title :
GaInNAs Lattice-Matched to GaAs for Photodiodes
Author :
Ng, J.S. ; Soong, W.M. ; Steer, M.J. ; Hopkinson, M. ; David, J.P.R. ; Chamings, J. ; Adams, A.R. ; Sweeney, S.J. ; Allam, J.
Author_Institution :
Univ. of Sheffield, Sheffield
Abstract :
We present optical and electrical characterization data obtained from bulk GalnNAs (lattice-matched to GaAs) diodes with varying GalnNAs composition. Good lattice-matching to GaAs, low reverse dark current and long wavelength absorption were achieved simultaneously, without the aid of post-growth annealing and use of antimony during the growth.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photodiodes; GaAs; GaInNAs; electrical characterization; optical characterization; photodiodes; post-growth annealing; Annealing; Crystalline materials; Dark current; Gallium arsenide; Lattices; Nitrogen; P-i-n diodes; Photodiodes; Photoluminescence; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381194
