Title :
Wide Temperature Range Operation at 43Gbit/s of 1.55μm InGaAlAs Electroabsorption Modulated Laser with Single Active Layer
Author :
Garreau, A. ; Cuisin, M.-C. ; Provost, J.-G. ; Jorge, F. ; Konczykowska, A. ; Jany, C. ; Decobert, J. ; Drisse, O. ; Blache, F. ; Carpentier, D. ; Derouin, E. ; Martin, F. ; Lagay, N. ; Landreau, J. ; Kazmierski, C.
Author_Institution :
Alcatel-Thales III-V Lab., Nozay
Abstract :
New self thermal compensated Single Active Layer AlGalnAs EML demonstrates 43 Gb/s open-eye operation for temperatures ranging between 10°C and 70°C. The dynamic extinction ratio over the whole temperature range was above 10 dB.
Keywords :
III-V semiconductors; compensation; electro-optical modulation; electroabsorption; extinction coefficients; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; InGaAlAs; InGaAlAs - Interface; bit rate 43 Gbit/s; dynamic extinction ratio; electroabsorption modulated laser; self thermal compensation; single active layer; temperature 10 C to 70 C; wavelength 1.55 μm; Bandwidth; Epitaxial growth; Extinction ratio; Laser stability; Optical materials; Power lasers; Semiconductor materials; Semiconductor optical amplifiers; Temperature dependence; Temperature distribution; 40Gbit/s; AlGaInAs; Electroabsorption Modulated Laser; Electroabsorption Modulator;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0874-1
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381197
