Title :
GaInNAs Electroabsorption Modulated Laser
Author :
Koyama, Kenji ; Hashimoto, Jun-ichi ; Ishizuka, Takashi ; Tsuji, Yukihiro ; Yamada, Takashi ; Fukuda, Chie ; Onishi, Yutaka ; Fujii, Kousuke ; Katsuyama, Tsukuru
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama
Abstract :
We for the first time fabricated an electroabsorption modulated laser (EML) with a GalnNAs multiple quantum well (MQW) active layer using the butt-joint regrowth technique. Single longitudinal mode operation with side-mode suppression ratio (SMSR) of more than 45 dB up to 120degC and the extinction ratio of more than 15 dB up to 100degC were obtained. The 2.5-Gb/s uncooled operation from 25degC to 100degC was successfully demonstrated by changing the EA bias voltage.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; EML; GaInNAs; MQW; SMSR; bit rate 2.5 Gbit/s; butt-joint regrowth technique; electroabsorption modulated laser; multiple quantum well active layer; side-mode suppression ratio; single longitudinal mode operation; temperature 25 C to 100 C; uncooled operation; Chirp modulation; Coatings; Costs; Distributed feedback devices; Electrons; Extinction ratio; Gallium arsenide; Laser modes; Optical materials; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381199
