High-Speed AlGaInAs-MQW Integrated EA Modulator/DFB Laser Module Based on Identical Epitaxial Layer Scheme for 40 Gb/s Optic Fiber Communication Systems

Author

Luo, Yi ; Cai, Pengfei ; Sun, Changzheng ; Xiong, Bing

Author_Institution

Tsinghua Univ., Beijing

fYear

2007

fDate

14-18 May 2007

Firstpage

369

Lastpage

371

Abstract

AlGalnAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical fibre communication; quantum well lasers; AlGaInAs; MQW-DFB laser; bit rate 40 Gbit/s; high-speed distributed feedback laser; identical epitaxial layer integration scheme; laser module; lumped-electrode electroabsorption modulator; modulation bandwidth; modulator; optical fiber communication system; Distributed feedback devices; Epitaxial layers; Fiber lasers; High speed optical techniques; Integrated optics; Optical feedback; Optical fiber communication; Optical materials; Optical modulation; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381200

Filename

4265957