Title :
High-Speed AlGaInAs-MQW Integrated EA Modulator/DFB Laser Module Based on Identical Epitaxial Layer Scheme for 40 Gb/s Optic Fiber Communication Systems
Author :
Luo, Yi ; Cai, Pengfei ; Sun, Changzheng ; Xiong, Bing
Author_Institution :
Tsinghua Univ., Beijing
Abstract :
AlGalnAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical fibre communication; quantum well lasers; AlGaInAs; MQW-DFB laser; bit rate 40 Gbit/s; high-speed distributed feedback laser; identical epitaxial layer integration scheme; laser module; lumped-electrode electroabsorption modulator; modulation bandwidth; modulator; optical fiber communication system; Distributed feedback devices; Epitaxial layers; Fiber lasers; High speed optical techniques; Integrated optics; Optical feedback; Optical fiber communication; Optical materials; Optical modulation; Quantum well devices;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381200