Title :
Mysterious Material InN in Nitride Semiconductors - What´s the Bandgap Energy and its Application?
Author :
Matsuoka, Takashi ; Nakao, Masashi
Author_Institution :
Tohoku Univ., Sendai
Abstract :
The progress in nitride semiconductors is reviewed. The current status in the growth and characteristics of InN, which remains the most mysterious compound, is reviewed. The phase diagram for InN growth, the optical absorption characteristic, polarity, temperature dependence of photoluminescence, future prospects are described. The application of InN for light emitting devices is discussed.
Keywords :
III-V semiconductors; indium compounds; infrared spectra; light emitting diodes; optical materials; phase diagrams; photoluminescence; photonic band gap; semiconductor growth; ultraviolet spectra; visible spectra; wide band gap semiconductors; InN - Interface; light emitting devices; nitride semiconductors; optical absorption characteristics; phase diagram; photoluminescence; semiconductor growth; wide bandgap semiconductors; Crystallization; Epitaxial growth; Gallium nitride; Indium phosphide; Optical buffering; Optical device fabrication; Optical films; Optical materials; Photonic band gap; Semiconductor materials;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381201
