Title :
MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates
Author :
Miura, K. ; Nagai, Y. ; Iguchi, Y. ; Tsubokura, M. ; Okada, H. ; Kawamura, Y.
Author_Institution :
Sumitomo Electr. Ind. Ltd., Osaka
Abstract :
We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; surface morphology; wide band gap semiconductors; As-III flux ratio; InGaAsN - Interface; InP - Substrates; MBE growth; PL wavelength; crystalline quality; lattice-matched thick layers; surface morphology; temperature 293 K to 298 K; Buffer layers; Crystallization; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Plasma temperature; Radio frequency; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381202
