InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy

We report the growth and characteristics of InP nanowires and InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. InP hexagonal nanowires with (110) sidewall facets were successfully formed on (111)B InP substrates. The core-multishell nanowires were also formed composed of InAs tube-like layer buried in a higher bandgap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all the three layers were epitaxially grown without the assistance of any catalyst. The periodically aligned nanowires and core-multishell nanowires were highly uniform, and Wulzaite structures. 4 K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP (110) sidewalls and the well widths corresponding to the PL peaks were in good agreement with calculated values.