DocumentCode
2978800
Title
AlAs/GaAs/GaP Heterostructure Nanowires Grown on Si Substrate
Author
Zhang, G. ; Tateno, K. ; Sanada, H. ; Sogawa, T. ; Nakano, H.
Author_Institution
NTT Corp., Kanagawa
fYear
2007
fDate
14-18 May 2007
Firstpage
388
Lastpage
391
Abstract
The growth of GaP and AlAs/GaAs/GaP heterostructure nanowires on Si using Au colloids as catalysts was investigated. For GaP nanowire growth, we found an epitaxial relationship between the GaP nanowires and Si substrate. The AlAs/GaAs/GaP heterostructure nanowires were found to grow vertically on Si. Structural analysis indicates that the hetero-interfaces are within several atomic layers in thickness and that the GaAs and AlAs segments have very few dislocations.
Keywords
aluminium compounds; catalysts; colloids; dislocations; gallium arsenide; gallium compounds; nanowires; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; AlAs-GaAs-GaP; Si; atomic layers; catalysts; colloids; dislocations; epitaxial growth; heterostructure nanowire growth; structural analysis; Epitaxial growth; Gallium arsenide; Gold; Lattices; Nanoscale devices; Nanowires; Scanning electron microscopy; Semiconductor materials; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381205
Filename
4265962
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