DocumentCode
2978846
Title
InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz
Author
Feng, M. ; Snodgrass, Williams
Author_Institution
Illinois Univ., Urbana
fYear
2007
fDate
14-18 May 2007
Firstpage
399
Lastpage
402
Abstract
InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record performance with Ft > 380 GHz in 2003.
Keywords
1/f noise; III-V semiconductors; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; 1/f noise; InP; Kirk effect; current driving; pseudormorphic heterojunction bipolar transistor; threshold voltage distribution; Bandwidth; Circuit noise; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Linearity; Silicon germanium; Threshold voltage; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381208
Filename
4265965
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