DocumentCode :
2978875
Title :
High Yield Transferred Substrate InP DHBT
Author :
Kraemer, T. ; Lenk, F. ; Maassdorf, A. ; Wuerfl, H.J. ; Traenkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fuer Hoechstfrequenztech., Berlin
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
407
Lastpage :
408
Abstract :
A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3%SD, fmax = 250 GHz plusmn 5%SD at a breakdown voltage of BVceo = 6 V.
Keywords :
heterojunction bipolar transistors; indium compounds; substrates; DHBT; InP-interface; breakdown voltage; double heterojunction bipolar transistors; high yield transferred substrate; homogeneous device characteristics; size 0.8 mum; voltage 6 V; Conference proceedings; Cutoff frequency; Double heterojunction bipolar transistors; Epitaxial layers; Indium phosphide; Parasitic capacitance; Substrates; Thermal conductivity; Thermal expansion; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381210
Filename :
4265967
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2978875
بازگشت