• DocumentCode
    2978893
  • Title

    Kirk Effect in Type-II InP/GaAsSb DHBTs with a Collector Doping Spike

  • Author

    Liu, H.G. ; Zeng, Y.P. ; Ostinelli, O. ; Bolognesi, C.R.

  • Author_Institution
    Swiss Fed. Inst. of Technol., Zurich
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    409
  • Lastpage
    412
  • Abstract
    The Kirk effect in type-II InP/GaAsSb DHBTs with spike-doped collectors is studied experimentally and theoretically. Accurate two-dimensional hydrodynamic (2D-HD) physical device simulations show that the Kirk threshold current in type-II DHBTs depends on negative conduction band offset (DeltaEC) and is a function of the doping spike position in the InP collector. The optimal collector design can significantly increase the Kirk current limit and the peak fT, without significantly reducing BVCEO.
  • Keywords
    heterojunction bipolar transistors; semiconductor doping; 2D-HD; DHBT; Kirk effect; collector doping spike; heterojunction bipolar transistors; optimal collector design; two-dimensional hydrodynamic physical device simulations; Conference proceedings; Current density; Density measurement; Doping; Double heterojunction bipolar transistors; High definition video; Hydrodynamics; Indium phosphide; Kirk field collapse effect; Laboratories;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381211
  • Filename
    4265968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2978893