DocumentCode :
2978893
Title :
Kirk Effect in Type-II InP/GaAsSb DHBTs with a Collector Doping Spike
Author :
Liu, H.G. ; Zeng, Y.P. ; Ostinelli, O. ; Bolognesi, C.R.
Author_Institution :
Swiss Fed. Inst. of Technol., Zurich
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
409
Lastpage :
412
Abstract :
The Kirk effect in type-II InP/GaAsSb DHBTs with spike-doped collectors is studied experimentally and theoretically. Accurate two-dimensional hydrodynamic (2D-HD) physical device simulations show that the Kirk threshold current in type-II DHBTs depends on negative conduction band offset (DeltaEC) and is a function of the doping spike position in the InP collector. The optimal collector design can significantly increase the Kirk current limit and the peak fT, without significantly reducing BVCEO.
Keywords :
heterojunction bipolar transistors; semiconductor doping; 2D-HD; DHBT; Kirk effect; collector doping spike; heterojunction bipolar transistors; optimal collector design; two-dimensional hydrodynamic physical device simulations; Conference proceedings; Current density; Density measurement; Doping; Double heterojunction bipolar transistors; High definition video; Hydrodynamics; Indium phosphide; Kirk field collapse effect; Laboratories;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381211
Filename :
4265968
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2978893
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