Title :
Strained In1-x, GaxP/GaAsSb DHBT
Author :
Hillier, G. ; Navaratnarajah, R. ; Dzankovic, A. ; Du, G. ; Tatavarti, R. ; Pan, N.
Author_Institution :
MicroLink Devices, Niles
Abstract :
InP/GaAsSb DHBT typically show a lower dc current gain to base sheet ratio in comparison to conventional InP/InGaAs DHBT, which limits the efficiency performance of InP/GaAsSb DHBT. A significant improvement in the dc current gain to base sheet ratio was achieved by inserting a pseudomorphic InGaP emitter spacer layer.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; InGaP-GaAsSb; W-band power amplifiers; base sheet ratio; current density; dc current gain; double heterojunction bipolar transistor; emitter spacer; Conference proceedings; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MMICs; Performance gain; Space technology; Substrates; Temperature measurement; Thermal management;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381213
