DocumentCode :
2979032
Title :
Polarization of single InGaAs quantum dots in photonic crystal nanocavities
Author :
Chen, W.-Y. ; Chang, H.-S. ; Hsieh, T.-P. ; Chyi, J.-I. ; Hsu, T.M.
Author_Institution :
Nat. Central Univ., Jhong-Li
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
438
Lastpage :
440
Abstract :
Polarizations of light emissions from single In0.5Ga0.5As quantum dots (QDs) in photonic crystal (PC) nanocavities were studied. It is found that an individual dot could excite different polarization direction when placed in the PC nanocavity with doubly degenerated cavity modes. On the contrary, a deterministic polarization state of QD emission is found when coupled to a single-mode PC nanocavity.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; nanostructured materials; photonic crystals; semiconductor quantum dots; InGaAs; deterministic polarization state; doubly degenerated cavity modes; light emission polarization; photonic crystal nanocavities; single quantum dots polarization; single-mode PC nanocavity; Biomembranes; Cryptography; Crystalline materials; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical polarization; Photonic crystals; Quantum dots; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381218
Filename :
4265975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2979032
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