DocumentCode :
2979046
Title :
Emitter layer design for high-speed InP HBTs with high reliability
Author :
Kashio, Norihide ; Kurishima, Kenji ; Fukai, Yoshino K. ; Yamahata, Shoji ; Miyamoto, Yasuyuki
Author_Institution :
NTT Corp., Kanagawa
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
441
Lastpage :
442
Abstract :
We investigated the influence of emitter doping level on the performance for high-speed InP HBTs with high reliability. The HBTs show high current gain and excellent reliability characteristics under stress current density of 5 mA/mum2.
Keywords :
heterojunction bipolar transistors; indium compounds; semiconductor device reliability; HBT reliability characteristics; InP; emitter doping level; emitter layer design; heterojunction bipolar transistor; stress current density; Conference proceedings; Current density; Doping; Indium phosphide; Materials reliability; Molecular beam epitaxial growth; Parasitic capacitance; Stress; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381219
Filename :
4265976
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2979046
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