• DocumentCode
    2979046
  • Title

    Emitter layer design for high-speed InP HBTs with high reliability

  • Author

    Kashio, Norihide ; Kurishima, Kenji ; Fukai, Yoshino K. ; Yamahata, Shoji ; Miyamoto, Yasuyuki

  • Author_Institution
    NTT Corp., Kanagawa
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    441
  • Lastpage
    442
  • Abstract
    We investigated the influence of emitter doping level on the performance for high-speed InP HBTs with high reliability. The HBTs show high current gain and excellent reliability characteristics under stress current density of 5 mA/mum2.
  • Keywords
    heterojunction bipolar transistors; indium compounds; semiconductor device reliability; HBT reliability characteristics; InP; emitter doping level; emitter layer design; heterojunction bipolar transistor; stress current density; Conference proceedings; Current density; Doping; Indium phosphide; Materials reliability; Molecular beam epitaxial growth; Parasitic capacitance; Stress; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381219
  • Filename
    4265976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2979046