Title :
Photoluminescence spectroscopy investigations of Si-doped InP nanowires fabricated by selective-area metalorganic vapor phase epitaxy
Author :
Ding, Ying ; Motohisa, Junichi ; Fukui, Takashi
Author_Institution :
Hokkaido Univ., Sapporo
Abstract :
Si-doped InP NWs were successfully fabricated by SA-MOVPE. PL measurements were carried out on Si-doped InP NWs. From the PL peak position caused by band-filling effect, we estimated the electron concentration in Si-doped InP NWs.
Keywords :
III-V semiconductors; MOCVD; indium compounds; nanowires; photoluminescence; silicon; vapour phase epitaxial growth; InP:Si; PL measurements; SA-MOVPE; Si-doped InP NW; Si-doped InP nanowires; electron concentration; photoluminescence spectroscopy; selective-area metalorganic vapor phase epitaxy; Doping; Epitaxial growth; Fabrication; Indium phosphide; Laser excitation; Nanowires; Photoluminescence; Scanning electron microscopy; Spectroscopy; Zinc;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381220
