Epitaxial Growth of (In)GaPN Systems for Monolithic Optoelectronic Integrated Circuits on Si Substrates

Author

Yonezu, H. ; Furukawa, Y. ; Wakahara, A.

Author_Institution

Toyohashi Univ. of Technol., Toyohashi

fYear

2007

fDate

14-18 May 2007

Firstpage

451

Lastpage

453

Abstract

The fundamental problems of the growth of III-V compounds on a Si substrate were overcome. As a result, structural defect-free GaPN and InGaPN layers were grown on a Si substrate. LEDs and Si MOSFETs, which are elemental devices for OEICs, were monolithically merged in a single chip. The developed processing flow was based on a conventional MOSFET processing flow. The growth and fabrication process technologies are effective for the realization of monolithic OEICs.

Keywords

III-V semiconductors; epitaxial growth; gallium compounds; indium compounds; integrated circuit technology; integrated optoelectronics; light emitting diodes; phosphorus compounds; semiconductor growth; silicon; GaPN; III-V compounds; InGaPN; LED; MOSFET; OEIC; Si; epitaxial growth; fabrication process technology; monolithic optoelectronic integrated circuits; processing flow; silicon substrate; structural defect-free layers; Circuit faults; Epitaxial growth; Large scale integration; Lattices; Light emitting diodes; MOSFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Stacking; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381223

Filename

4265980