DocumentCode :
2979133
Title :
Heteroepitaxy of Antimonides on InP
Author :
Cheng, K.Y. ; Wu, Bing-Ruey
Author_Institution :
Univ. of Illinois at Urbana-Champaign, Urbana
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
454
Lastpage :
457
Abstract :
High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ultra-highspeed (fT>500 GHz) InP/GaAsSb/InP double heterojunction bipolar transistors. The issues of achieving high-quality GaAsSb/InP heterostructures growth by gas source molecular beam epitaxy are reviewed.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor heterojunctions; InP-GaAsSb-InP; antimonides; double heterojunction bipolar transistors; gas source molecular beam epitaxy; heteroepitaxy; lattice-matched epitaxial layers; Aluminum alloys; Double heterojunction bipolar transistors; Electrons; Indium phosphide; Lattices; Mass spectroscopy; Molecular beam epitaxial growth; Substrates; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381224
Filename :
4265981
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2979133
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