DocumentCode :
2979172
Title :
Selective Formation of High Density InAs Quantum Dot Arrays Using Templates Fabricated by the Nano-Jet Probe
Author :
Ohkouchi, S. ; Sugimoto, Y. ; Ozaki, N. ; Ishikawa, H. ; Asakawa, K.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
466
Lastpage :
469
Abstract :
We have demonstrated the selective area growth of high density InAs quantum dots (QDs) in the square regions by using site-controlled InAs dots that were formed in the desired regions as templates. These fabricated InAs dots for the templates were enabled by the use of a specially designed atomic-force-microscope (AFM) cantilever, referred to as the Nano-Jet Probe (NJP). Using the NJP, two-dimensional (2D) arrays of ordered In nano-dots were fabricated in the desired square regions on a GaAs substrate. These In nano-dots were directly converted to InAs QD arrays by subsequent annealing with irradiation of arsenic flux. By using the converted QD arrays as strain templates, self-organized InAs QDs with high density were formed in the selected square regions.
Keywords :
probes; quantum dots; substrates; annealing; arsenic flux irradiation; atomic-force-microscope cantilever; nano-dots; nano-jet probe; quantum dot array; selective formation; substrate; template fabrication; Apertures; Capacitive sensors; Conference proceedings; Gallium arsenide; Indium phosphide; Materials science and technology; Probes; Quantum dots; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381227
Filename :
4265984
Link To Document :
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