Title :
80 °C CW Operation of GaInAsP/InP Membrane BH-DFB Laser with Air-Bridge Structure
Author :
Naitoh, Hideyuki ; Sakamoto, Shinichi ; Ohtake, Mamoru ; Okumura, Tadashi ; Maruyama, Takeo ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
Membrane BH-DFB lasers emitting in 1500-1600 nm wavelength are realized with an air-bridge structure, and continuous wave operations up to moderately high temperature (80degC) were achieved under an optical pumping. The thermal resistance was estimated to be 11 K/mW, which is half that of membrane BH-DFB lasers fabricated by bonding on BCB coated InP substrate.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; indium compounds; laser beams; optical pumping; semiconductor lasers; thermal resistance; BCB coated InP substrate; GaInAsP-InP; InP; air-bridge structure; continuous wave laser operation; membrane BH-DFB laser fabrication; optical pumping; temperature 80 C; thermal resistance; wavelength 1500 nm to 1600 nm; Biomembranes; Distributed feedback devices; Indium phosphide; Laser feedback; Laser stability; Optical device fabrication; Optical pumping; Power lasers; Pump lasers; Semiconductor lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381230
