Impact of Interface Formation on Intersubband Transitions in MBE GaInAs:Si/AlAsSb Multiple Coupled DQWs

Author

Biermann, Klaus ; Kuenzel, Harald ; Tribuzy, Christiana Villas-Boas ; Ohser, Sabine ; Schneider, Harald ; Helm, Manfred

Author_Institution

Fraunhofer Inst. for Telecommun., Berlin

fYear

2007

fDate

14-18 May 2007

Firstpage

498

Lastpage

501

Abstract

The impact of indium segregation and diffusion of antimony on intersubband transition (IST) wavelengths in AlAsSb/GalnAs multiple quantum well (MQW) and double quantum well (DQW) structures has been evaluated. By means of 8-band k-p calculations the effect of non-abrupt interfaces on IST wavelengths in such structures is elucidated. Comparison of measured and calculated absorption spectra reveals the sacrificial character of AlAs interfacial layers for diffused or segregated atoms and allows for estimating the limits of the intersubband approach as regards short wavelength relaxation transitions.

Keywords

III-V semiconductors; antimony; gallium compounds; molecular beam epitaxial growth; semiconductor quantum wells; spectra; GaInAs:Si-AlAsSb; MBE; absorption spectra; antimony; diffusion; double quantum well; indium segregation; interface formation; interfacial layers; intersubband transition wavelengths; multiple quantum well; short wavelength relaxation transitions; Atomic measurements; Conducting materials; Dispersion; Electromagnetic wave absorption; Epitaxial layers; Infrared spectra; Optical fiber communication; Optical materials; Quantum well devices; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381237

Filename

4265994