DocumentCode
2979376
Title
Improved Temperature Dependences of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning
Author
Nishimoto, Yutaka ; Plumwongrot, Dhanorm ; Ullah, Saeed Mahmud ; Tamura, Yosuke ; Kurokawa, Munetaka ; Maruyama, Takeo ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution
Tokyo Inst. of Technol, Tokyo
fYear
2007
fDate
14-18 May 2007
Firstpage
513
Lastpage
516
Abstract
By adopting Bragg wavelength detuning into DFB lasers with wirelike active regions, the changes of threshold current densities and differential quantum efficiencies as low as plusmn19% and 24%, respectively, were obtained between 10degC and 85degC.
Keywords
III-V semiconductors; current density; distributed feedback lasers; gallium compounds; indium compounds; laser tuning; semiconductor lasers; Bragg wavelength detuning; DFB lasers; GaInAsP-InP; differential quantum efficiencies; temperature 10 C to 85 C; threshold current densities; wirelike active regions; Distributed Bragg reflectors; Distributed feedback devices; Indium phosphide; Laser feedback; Quantum well lasers; Surface emitting lasers; Temperature dependence; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381241
Filename
4265998
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