Title :
A 60-GHz-Band Optical Injection-Locked Oscillator Using a Top/Back-Illuminated InP/InGaAs HPT
Author :
Kamitsuna, Hideki ; Ida, Minoru ; Kurishima, Kenji
Author_Institution :
NTT Corp., Kanagawa
Abstract :
This paper presents a 60-GHz-band oscillator that uses an InP/InGaAs heterojunction photo transistor (HPT) based on heterojunction bipolar transistor technologies. The HPT oscillator can be optically injection-locked by directly illuminating the HPT from either the top or back of the substrate since it has a photocoupling window in the emitter electrode and a "transparent" InP subcollector layer. When 2-nd subharmonic (around 30 GHz) and 4-th subharmonic (around 15 GHz) RF signal drive the optical modulator, the oscillator achieves respective wide locking ranges of 658 and 40 MHz. Nearly the same performance is obtained for top and back illumination.
Keywords :
gallium arsenide; heterojunction bipolar transistors; indium compounds; injection locked oscillators; millimetre wave oscillators; optical modulation; InP subcollector layer; InP-InGaAs; RF signal drive; emitter electrode; frequency 60 GHz; heterojunction bipolar transistor technology; heterojunction photo transistor; optical injection-locked oscillator; optical modulator; photocoupling window; top-back-illuminated InP-InGaAs HPT; Electrodes; Frequency; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Injection-locked oscillators; Optical modulation; Optical noise; Stimulated emission;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381247
