DocumentCode

2979540

Title

Gate Current In Complementary HFETs

Author

Schuermeyer, F. ; Martinez, E. ; Shur, M. ; Grider, D.

Author_Institution

University of Virginia

fYear

1992

fDate

21-24 June 1992

Keywords

Circuit simulation; Doping; FETs; HEMTs; Leakage current; MODFETs; Power dissipation; Silicon compounds; Thermionic emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1992. Digest. 50th Annual

Conference_Location

Cambridge, MA, USA

Type

conf

DOI

10.1109/DRC.1992.671868

Filename

671868