Title :
Enhanced Maximum Modal Gain of 1.3-μm Antimony Mediated InAs Self-Assembled Quantum-Dot Lasers
Author :
Ishida, M. ; Watanabe, K. ; Kumagai, N. ; Nakata, Y. ; Hatori, N. ; Sudo, H. ; Yamamoto, Takayuki ; Sugawara, M. ; Arakawa, Yasuhiko
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
Gain characteristics of antimony-mediated high-density InAs quantum-dot lasers were evaluated. For the lasers with 5 and 10 quantum dot layers, 88% and 39% increase in the maximum modal gain, respectively, was obtained compared with that of conventional InAs quantum dots.
Keywords :
III-V semiconductors; indium compounds; laser beams; quantum dot lasers; self-assembly; InSbAs; antimony-mediated InAs self-assembled quantum-dot lasers; enhanced maximum modal gain characteristics; wavelength 1.3 μm; Bandwidth; Conference proceedings; Degradation; Indium phosphide; International collaboration; Mediation; Optical materials; Quantum dot lasers; Quantum dots; Solids;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0874-1
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381251
