Title :
Growth of GaAs and AlGaAs on Si substrates by atomic hydrogen assisted MBE (H-MBE) for solar cell applications
Author :
Okada, Yoshitaka ; Kawabata, Akio ; Kawabe, Mitsuo ; Yui, Naomasa ; Awanami, H.
Author_Institution :
Inst. of Mater. Sci., Tsukuba Univ., Ibaraki, Japan
Abstract :
The crystalline quality of both GaAs and AlGaAs films grown on Si substrates by atomic hydrogen-assisted low-temperature molecular beam epitaxy (H-MBE) technique have been studied using time-resolved photoluminescence method. An average minority carrier lifetime of τ=1.93 ns has been successfully obtained for n-AlxGa1-xAs (x=0.2) films on Si grown at a low-temperature of 330°C by H-MBE technique (n=2×1017 cm-3), and was comparable to those grown on GaAs substrates by the conventional MBE. The role of atomic hydrogen in MBE growth process has been discussed based on the secondary ion mass spectroscopy (SIMS) analysis. The authors have also fabricated GaAs solar cell structures on Si substrates by their technique and their fundamental properties have been briefly discussed
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; elemental semiconductors; gallium arsenide; hydrogen; minority carriers; molecular beam epitaxial growth; photoluminescence; secondary ion mass spectroscopy; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; time resolved spectroscopy; 1.93 ns; 330 C; AlGaAs; GaAs; H-MBE; Si; applications; atomic hydrogen-assisted low-temperature molecular beam epitaxy; fabrication; minority carrier lifetime; secondary ion mass spectroscopy; semiconductor; solar cell; time-resolved photoluminescence method; Atomic beams; Atomic layer deposition; Charge carrier lifetime; Crystallization; Gallium arsenide; Hydrogen; Molecular beam epitaxial growth; Photoluminescence; Semiconductor films; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520545