DocumentCode
2979773
Title
Advances in Gallium Nitride-based Electronics
Author
Adesida, I. ; Kumar, V.
Author_Institution
Univ. of Illinois, Urbana
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
1
Lastpage
6
Abstract
The III -nitrides AIN, GaN, InN and their alloys are a novel family of semiconductor materials for optoelectronics as well as for electronics. GaN-based high electron mobility transistors (HEMTs) have shown superior power density and operating temperatures at frequency ranges that are beyond the limits of devices fabricated from Si and other III-V materials. This paper presents the advances in the GaN HEMT technology.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; III-V materials; high electron mobility transistors; operating temperatures; power density; semiconductor materials; Aluminum gallium nitride; Frequency; Gallium alloys; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Microwave devices; Optical materials; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450046
Filename
4450046
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