Title :
A new physics-based circuit model for 4H-SiC power diodes implemented in SABER
Author :
Kolessar, R. ; Nee, H.P.
Author_Institution :
Dept. of Electr. Eng., Electr. Machines & Power Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
A circuit-oriented model for 4H-SiC power diodes is presented. The modeling technique used in this work was previously applied to a silicon (Si) power diode model for both turn-on and turn-off transients, and presents a good trade-off between accuracy and speed. The model is physics-based, but includes judicious approximations for fast calculation, and includes up-to-date physical models for silicon carbide, with temperature dependence. The proposed model is practically implemented in the circuit simulator SABER, using the MAST modeling language. Model performances are compared to measurements on 2.5 kV 400 A Si IGBT/SiC diode modules from ABB at various input currents
Keywords :
electronic engineering computing; hydrogen; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; silicon compounds; 2.5 kV; 400 A; 4H-SiC power diodes; MAST modeling language; SABER; SiC; approximations; computer simulation; physics-based circuit model; turn-off transients; turn-on transients; Anodes; Cathodes; Charge carrier processes; Circuit simulation; Current density; Diodes; Energy states; Power electronics; Power system modeling; Silicon carbide;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-6618-2
DOI :
10.1109/APEC.2001.912487
