SiSMA: a statistical simulator for mismatch analysis of MOS ICs

Author

Biagetti, G. ; Orcioni, S. ; Signoracci, L. ; Turchetti, C. ; Crippa, P. ; Alessandrini, M.

Author_Institution

Dipt. di Elettronica e Autom., Ancona Univ., Italy

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

490

Lastpage

496

Abstract

This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Monte Carlo analysis, while ensuring a good accuracy.

Keywords

CMOS integrated circuits; MOS integrated circuits; circuit simulation; differential equations; integrated circuit design; integrated circuit modelling; statistical analysis; stochastic processes; MOS IC; MOS integrated circuits; Monte Carlo analysis; SiSMA statistical simulator; circuit equations; mismatch analysis; random current sources; simulation time; stochastic differential equations; stochastic simulation; technological tolerances; Analytical models; Circuit simulation; Covariance matrix; Differential equations; Integrated circuit technology; MOSFETs; Predictive models; Production; Statistical analysis; Stochastic processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Aided Design, 2002. ICCAD 2002. IEEE/ACM International Conference on

ISSN

1092-3152

Print_ISBN

0-7803-7607-2

Type

conf

DOI

10.1109/ICCAD.2002.1167577

Filename

1167577