Title :
Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm
Author :
Boutillier, M. ; Gauthier-Lafaye, O. ; Bonnefont, S. ; Lelarge, F. ; Dagens, B. ; Make, D. ; Gouezigou, O. Le ; Rousseau, B. ; Accard, A. ; Poingt, F. ; Pommereau, F. ; Lozes-Dupuy, F.
Author_Institution :
LAAS-CNRS, Univ. de Toulouse, Toulouse, France
Abstract :
Quantum dash lasers were irradiated for the first time, using 31 MeV protons. These novel structures, which show promising performances for 1.55 mum optical communications exhibit better robustness to radiation than quantum well lasers.
Keywords :
III-V semiconductors; indium compounds; laser beam effects; optical communication; quantum dash lasers; InAs-InP; laser irradiation; optical communications; proton irradiation effects; quantum dash laser diodes emitting; wavelength 1.55 mum; Diode lasers; Fiber lasers; Indium phosphide; Laser noise; Optical receivers; Protons; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Proton radiation effects; Quantum dots; Semiconductor lasers;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205462
